Title
Bimolecular recombination in ambipolar organic field effect transistors
Author
Charrier, D.S.H.
de Vries, T.
Mathijssen, S.G.J.
Geluk, E.-J.
Smits, E.C.P.
Kemerink, M.
Janssen, R.A.J.
TNO Industrie en Techniek
Publication year
2009
Abstract
In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by SKPM are distorted due to spurious capacitive couplings. Here, we present a (de)convolution method with an experimentally calibrated transfer function to reconstruct the actual surface potential from a measured SKPM response and vice versa. Using this scheme, we find W = 0.5 lm for a nickel dithiolene OFET, which translates into a recombination rate that is two orders of magnitude below the value expected for Langevin recombination.
Subject
Mechatronics, Mechanics & Materials
TS - Technical Sciences
Electronics
Bimolecular recombination
Organic field effect transistor
Scanning Kelvin probe microscopy
Deconvolution
To reference this document use:
http://resolver.tudelft.nl/uuid:166922ab-fa17-42f1-bbef-032fb9b0b717
TNO identifier
441429
Source
Organic Electronics, 994-997
Document type
article