Print Email Facebook Twitter Determining carrier mobility with a metal–insulator–semiconductor structure Title Determining carrier mobility with a metal–insulator–semiconductor structure Author Stallinga, P. Benvenho, A.R.V. Smits, E.C.P. Mathijssen, S.G.J. Colle, M. Gomes, H.L. de Leeuw, D.M. TNO Industrie en Techniek Publication year 2008 Abstract The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS) structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. Subject Electronics To reference this document use: http://resolver.tudelft.nl/uuid:121d2f86-c8b6-4e1c-b961-5a7074b94773 TNO identifier 441428 Source Organic Electronics, 735-739 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.