Print Email Facebook Twitter Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays Title Photocrosslinking of ferroelectric polymers and its application in three-dimensional memory arrays Author van Breemen, A.J.J.M. van der Putten, J.B.P.H. Cai, R. Reimann, K. Marsman, A.W. Willard, N. de Leeuw, D.M. Gelinck, G.H. Publication year 2011 Abstract An I-line photolithography process for ferroelectric polymers is developed. It is based on photocrosslinking using a bisazide photoinitiator. Patterned layers were realized down to 1-2 µm resolution. Crosslinking yields a close-to-insoluble ferroelectric polymer network that counter intuitively has similar ferroelectric properties as a noncrosslinked film. The negative process is used to stack ferroelectric films on top of each other to make three-dimensional cross-bar arrays of nonvolatile ferroelectric capacitor memories. © 2011 American Institute of Physics. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsFerroelectric capacitorsFerroelectric polymersFerroelectric propertyMemory arrayNon-crosslinked filmsNon-volatilePatterned layersPhoto-initiatorPhotocross-linkingPhotolithography processFerroelectric devicesFerroelectricityPhotolithographyPolymersThree dimensionalFerroelectric films To reference this document use: http://resolver.tudelft.nl/uuid:0f9fd779-d31b-43e2-a48e-fcff1b0054ac TNO identifier 430686 ISSN 1941-420X Source APL: Organic Electronics and Photonics, 4 (5) Article number No.: 183302 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.