Title
The operational mechanism of ferroelectric-driven organic resistive switches
Author
Kemerink, M.
Asadi, K.
Blom, P.W.M.
de Leeuw, D.M.
Publication year
2012
Abstract
The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2. © 2011 Elsevier B.V. All rights reserved.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
High Tech Systems & Materials
Industrial Innovation
Charge transport
Data storage
Ferroelectric nanostructures
Organic semiconductors
Thin films
Crossbar arrays
Data storage
Exponential dependence
Feature sizes
Ferroelectric nanostructures
Ferroelectric phase
Information density
Injection barriers
Lower limits
Memory element
Metallic electrodes
On/off ratio
Operational mechanism
Organic semiconductor
Rewritable memory
Space-charge limited
Stray field
Switching mechanism
Charge transfer
Logic circuits
Semiconducting organic compounds
Thin films
Ferroelectricity
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DOI
https://doi.org/10.1016/j.orgel.2011.10.013
TNO identifier
461347
ISSN
1566-1199
Source
Organic Electronics: physics, materials, applications, 13 (1), 147-152
Document type
article