Print Email Facebook Twitter Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm Title Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm Author Tripathi, A.K. Myny, K. Hou, B. Wezenberg, K. Gelinck, G.H. Publication year 2015 Abstract In this paper, we present the fabrication and characterization of highly flexible indium-gallium-zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a transparent and thin polymer substrate. Mechanical reliability tests are performed under bending conditions down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% without any significant change in the device operation. Mechanical reliability is further demonstrated to a higher TFT integration level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm. cop. 1963-2012 IEEE. Subject Nano TechnologyHOL - HolstTS - Technical SciencesElectronicsIndustrial InnovationFlexible circuitsFlexible displaysIndium-gallium-zinc oxideIGZOMechanical reliabilityRadio-Frequency identification.Thin film transistorsTFT To reference this document use: http://resolver.tudelft.nl/uuid:0acecd24-bfb1-4cf9-8044-60637a7cceea DOI https://doi.org/10.1109/ted.2015.2494694 TNO identifier 534082 Publisher Institute of Electrical and Electronics Engineers Inc. ISSN 0018-9383 Source IEEE Transactions on Electron Devices, 62 (12), 4063-4068 Article number 7323805 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.