Print Email Facebook Twitter Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode Title Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode Author Lee, J. van Breemen, A.J.J.M. Khikhlovskyi, V. Kemerink, M. Janssen, R.A.J. Gelinck, G.H. Publication year 2016 Abstract We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit. Subject TS - Technical SciencesNano TechnologyIndustrial InnovationData StorageMemory DiodeFerroelectric diodeHOL - Holst To reference this document use: http://resolver.tudelft.nl/uuid:05af19dd-7094-483d-8840-1d511994ef80 DOI https://doi.org/10.1038/srep24407 TNO identifier 535473 ISSN 2045-2322 Source Scientific Reports, 6 (6) Document type article Files PDF lee-2016-pulse-modulated.pdf