Print Email Facebook Twitter Reducing charge noise in quantum dots by using thin silicon quantum wells Title Reducing charge noise in quantum dots by using thin silicon quantum wells Author Paquelet Wuetz, B. Degli Esposti, D. Zwerver, A.M.J. Amitonov, S.V. Botifoll, M. Arbiol, J. Vandersypen, L.M.K. Russ, M. Scappucci, G. Publication year 2023 Abstract Charge noise in the host semiconductor degrades the performance of spinqubits and poses an obstacle to control large quantumprocessors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopicHall bars. In 5 nmthick 28Si quantumwells, we find that improvements in the scattering properties and uniformity of the twodimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29±0.02 μeV/Hz½ at 1Hz averaged over several quantum dots.Weextrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system. Subject High Tech Systems & MaterialsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:eaa5ce69-b22d-4aca-b64f-8f54148030de DOI https://doi.org/10.1038/s41467-023-36951-w TNO identifier 984479 Publisher Springer Nature Source Nature Communications, 14 (14) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.