Print Email Facebook Twitter The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide Title The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide Author Poodt, P.W.G. Illiberi, A. Roozeboom, F. Publication year 2013 Abstract Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (< 100 C) spatial atomic layer deposition of alumina from tri-methyl aluminum and water. The water partial pressure and the exposure time were identified as the critical parameters in this process. © 2012 Elsevier B.V. Subject Mechatronics, Mechanics & MaterialsTFT - Thin Film TechnologyTS - Technical SciencesHigh Tech Systems & MaterialsMaterialsIndustrial InnovationAluminum oxideLow temperatureSpatial atomic layer deposition To reference this document use: http://resolver.tudelft.nl/uuid:e3731fbe-124c-432e-b5e9-52e6ebf951b4 TNO identifier 471063 ISSN 0040-6090 Source Thin Solid Films, 532, 22-25 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.