Title
N-Type self-assembled monolayer field-effect transistors and complementary inverters
Author
Ringk, A.
Li, X.
Gholamrezaie, F.
Smits, E.C.P.
Neuhold, A.
Moser, A.
van der Marel, C.
Gelinck, G.H.
Resel, R.
de Leeuw, D.M.
Strohriegl, P.
Publication year
2013
Abstract
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10-3 cm2 V-1 s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Highly reproducible n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative are reported. Electron mobilities of 1.5 × 10-3 cm2 V-1s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Copyright (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
High Tech Systems & Materials
Electronics
Industrial Innovation
complementary inverter
n-type field-effect transistor
organic circuits
perylene bisimide
self-assembled monolayer
Active molecules
Complementary inverters
ON/OFF current ratio
Organic circuits
Perylene bisimides
Perylene derivatives
Phosphonic acids
Transistor channels
Electron mobility
Organic acids
Self assembled monolayers
Transistors
Field effect transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:dd361782-0604-41a8-a62b-02466562101a
DOI
https://doi.org/10.1002/adfm.201202888
TNO identifier
472015
ISSN
1616-301X
Source
Advanced Functional Materials, 23 (16), 2016-2023
Document type
article