Title
Charge trapping in organic transistor memories: On the role of electrons and holes
Author
Debucquoy, M.
Rockelé, M.
Genoe, J.
Gelinck, G.H.
Heremans, P.
TNO Industrie en Techniek
Publication year
2009
Abstract
In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity. © 2009 Elsevier B.V. All rights reserved.
Subject
Electronics
Industrial Innovation
Ambipolar
Charge trapping
Memory
Organic transistor
Tunneling
Ambipolar
Bi-directional
Efficient method
Electrons and holes
Memory
Memory performance
Organic transistor
Polymeric insulators
Semiconductor channels
Threshold voltage shifts
Trapped charge
Tunneling
Gate dielectrics
Gates (transistor)
Threshold voltage
Transistors
Tunneling (excavation)
Wind tunnels
Charge trapping
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TNO identifier
279976
ISSN
1566-1199
Source
Organic Electronics: physics, materials, applications, 10 (7), 1252-1258
Document type
article