Print Email Facebook Twitter 3D Advance Metrology by means of 3D Atomic Force Microscopy Title 3D Advance Metrology by means of 3D Atomic Force Microscopy Author Herfst, R.W. Nulkes-de Groot, N. Lucas, P. Bijnagte, T. Dekker, B. Biemond, J.J.B. van Riel, M.J.C.M. van Essen, B.H.M.F. van Koppen, M.E.C.T. Oosterling, J.A.J. Kramer, L. Nieuwkoop, E. Corbet, F. Visser, L. Man, H. Publication year 2019 Abstract We developed a new 3D-AFM technique that enables imaging of high aspect ratio trenches. By measuring both lateral and vertical forces on a cantilever tip, a subharmonic mode based on the attractive tip-sample forces becomes feasible. This enables the measurement of true 3D information of samples without causing damage. This is especially relevant for semiconductor metrology, as current solutions are lagging behind the development of (near-future) lithography capabilities. Our goal: measure metrology parameters such as critical dimension (CD), side wall angle (SWA), Line edge Roughness (LER), etc. Subject High Tech Systems & MaterialsIndustrial InnovationMetrologyMicroscopy3D atomic force microscopyERP Early Research ProgramERP 3D Nanomanufacturing Instruments To reference this document use: http://resolver.tudelft.nl/uuid:bfc8427a-bf6b-468d-bc20-ae3fef92a351 TNO identifier 867637 Publisher TNO, Delft Source SID Semicon Innovation Day, Science Centre Delft, 21 May 2019 Bibliographical note Presented poster Document type other Files To receive the publication files, please send an e-mail request to TNO Library.