Print Email Facebook Twitter Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors Title Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors Author Gholamrezaie, F. Asadi, K. Kicken, R.A.H.J. Langeveld-Voss, B.M.W. de Leeuw, D.M. Blom, P.W.M. Publication year 2011 Abstract We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10-5 cm2 V-1 s-1. © 2011 Elsevier B.V. All rights reserved. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsIndustrial InnovationCharge injectionOrganic field-effect transistorSelf-assembled monolayerAg electrodeCurrent modulationField-effect mobilitiesInjection barriersPoly(9 ,9-dioctylfluorene)SamsSource and drain electrodesTop-gateUpper surfaceDrain currentElectrodesOrganic polymersSelf assembled monolayersTransistorsOrganic field effect transistors To reference this document use: http://resolver.tudelft.nl/uuid:bbb95a9a-e8c7-4903-a858-e4425a595a8a TNO identifier 442971 ISSN 0379-6779 Source Synthetic Metals, 161 (21-22), 2226-2229 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.