Print Email Facebook Twitter 60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals Title 60 GHz 5-bit digital controlled phase shifter in a digital 40 nm CMOS technology without ultra-thick metals Author Gao, H. Ying, K. Matters-Kammerer, M.K. Harpe, P. Wang, B. Liu, B. Serdijn, W.A. Baltus, P.G.M. Publication year 2016 Abstract A 5-bit digital controlled switch-type passive phase shifter realised in a 40 nm digital CMOS technology without ultra-thick metals for the 60 GHz Industrial, Scientific and Medical (ISM) band is presented. A patterned shielding with electromagnetic bandgap structure and a stacked metals method to increase the on-chip inductor quality factor are proposed. To reduce the insertion loss from the transistors, the transistor switches are implemented with a body-source connection. For all 32 states, the minimum phase error is 1.5°, and the maximum phase error is 6.8°. The measured insertion loss is -20.9 ± 1 dB including pad loss at 60 GHz and the return loss is >10 dB over 57-64 GHz. The total chip size is 0.24 mm2 with 0 mW DC power consumption. Subject Nano TechnologyHOL - HolstTS - Technical SciencesMaterialsIndustrial InnovationCMOS integrated circuitsElectromagnetic shieldingInsertion lossesControlled phase shiftersDC power consumptionDigital CMOS technologyElectromagnetic bandgap structuresOnchip inductorsTransistor switchPhase shifters To reference this document use: http://resolver.tudelft.nl/uuid:a2928936-a0e9-4ffd-9b26-645ebbe029ff DOI https://doi.org/10.1049/el.2016.0949 TNO identifier 573070 Publisher Institution of Engineering and Technology ISSN 0013-5194 Source Electronics Letters, 52 (19), 1611-1613 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.