Title
Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells
Author
Frijters, C.H.
Poodt, P.
Illeberi, A.
Publication year
2016
Abstract
Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior uniformity over large-area and even non-flat substrates. Diethylzinc, water and hydrogen sulfite (H2S) have been used as zinc, oxygen and sulfur precursor, respectively. The S/(S+O) ratio in the film is accurately controlled by exposing the substrate simultaneously to both H2O and H2S precursors, which are pre-mixed and co-injected in the same deposition zone. The optoelectronic and morphological properties of Zn(O,S) are characterized as a function of the S/(S+O) ratio. Zn(O,S) buffer layers with different values of S/(S+O) ratio are applied in CIGS solar cells. An optimum value of S/(S+O) ratio of about 0.4 is found for which both the short circuit current density (Jsc=34.2 mA/cm2) and cell efficiency (η=15.9%) increase, as compared to reference cells with CdS buffer layer (Jsc=32.1 mA/cm2, η=15.5%).
Subject
Nano Technology
TFT - Thin Film Technology
TS - Technical Sciences
Materials Energy
Industrial Innovation
Buffer layer
Zinc oxysulfide
Atomiclayerdeposition
Chalcopyrite
Thin film
Solar cells
To reference this document use:
http://resolver.tudelft.nl/uuid:9a1cdb26-2023-42f3-8812-c0b149a0df92
DOI
https://doi.org/10.1016/j.solmat.2016.06.016
TNO identifier
538166
Publisher
Elsevier
ISSN
0927-0248
Source
Solar Energy Materials & Solar Cells, 155, 356-361
Document type
article