Print Email Facebook Twitter Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors Title Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors Author Illiberi, A. Katsouras, I. Gazibegovic, S. Cobb, B. Nekovic, E. van Boekel, W. Frijters, C. Maas, J. Roozeboom, F. Creyghton, Y. Gelinck, G. Publication year 2018 Abstract In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production. Subject Nano TechnologyHOL - HolstTS - Technical SciencesMaterials PhysicsIndustrial InnovationAtomic layer depositionSpatial ALDIZOTFTThin film transistors To reference this document use: http://resolver.tudelft.nl/uuid:91dc1e3b-763b-459e-bcf3-b3620b8ff06d DOI https://doi.org/10.1116/1.5008464 TNO identifier 785889 Publisher American Vacuum Society ISSN 0734-2101 Source Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36 (4) Article number 04F401 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.