Title
Flexible NAND-Like Organic Ferroelectric Memory Array
Author
Kam, B.
Ke, T.H.
Chasin, A.
Tyagi, M.
Cristoferi, C.
Tempelaars, K.
van Breemen, A.J.J.M.
Myny, K.
Schols, S.
Genoe, J.
Gelinck, G.H.
Heremans, P.
Publication year
2014
Abstract
We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 × 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.
Subject
Mechanics, Materials and Structures
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Ferroelectric
Nonvolatile memory
Organic semiconductors
NAND
Memory array
To reference this document use:
http://resolver.tudelft.nl/uuid:7789f4d9-fed9-4ac5-9351-4e336fc9fd31
TNO identifier
502173
Source
IEEE Electron Device Letters, 35 (5), 539-541
Document type
article