Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Cai, R.; Kassa, H.G.; Marrani, A.; van Breemen, A.J.J.M.; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

doi:10.1117/12.2185677

Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Title

Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer

Author

Cai, R.
Kassa, H.G.
Marrani, A.
van Breemen, A.J.J.M.
Gelinck, G.H.
Nysten, B.
Hu, Z.
Jonas, A.M.

Contributor

Kratochvil, E.J.W.L. (editor)

Publication year

2015

Abstract

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor. cop. 2015 SPIE.

Subject

Nano Technology
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
FeFETs
Ferroelectric polymer
Nano-imprint
Nanowires
Organic memory
Semiconducting polymer