Suitability of integrated protection diodes from diverse semiconductor technologies
TNO Defensie en Veiligheid
van Wanum, M.
van Vliet, F.E.
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for Gallium Arsenide and Gallium Nitride based protection diodes.
To reference this document use:
Gallium nitride GaN
European Microwave Association EuMA, Louvain-la-Neuve
European Microwave Week 2009 - EuMW 2009 - 4th European Microwave Integrated Circuits Conference - EuMIC 2009, 28 September - 2 October 2009, Rome, Italy, 294-297