Title
Suitability of integrated protection diodes from diverse semiconductor technologies
Author
TNO Defensie en Veiligheid
van Wanum, M.
Lebouille, T.T.N.
Visser, G.C.
van Vliet, F.E.
Publication year
2009
Abstract
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for Gallium Arsenide and Gallium Nitride based protection diodes.
Subject
Diodes
Receivers
Protection
Comparison
Protection diodes
Electromagnetic interference
Gallium nitride GaN
Gaas
To reference this document use:
http://resolver.tudelft.nl/uuid:5521a8c7-0bce-42d1-a02b-60d48e20f31e
TNO identifier
272842
Publisher
European Microwave Association EuMA, Louvain-la-Neuve
ISBN
9782874870125
Source
European Microwave Week 2009 - EuMW 2009 - 4th European Microwave Integrated Circuits Conference - EuMIC 2009, 28 September - 2 October 2009, Rome, Italy, 294-297
Document type
conference paper