Print Email Facebook Twitter The operational mechanism of ferroelectric-driven organic resistive switches Title The operational mechanism of ferroelectric-driven organic resistive switches Author Kemerink, M. Asadi, K. Blom, P.W.M. de Leeuw, D.M. Publication year 2012 Abstract The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm2. © 2011 Elsevier B.V. All rights reserved. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesHigh Tech Systems & MaterialsIndustrial InnovationCharge transportData storageFerroelectric nanostructuresOrganic semiconductorsThin filmsCrossbar arraysData storageExponential dependenceFeature sizesFerroelectric nanostructuresFerroelectric phaseInformation densityInjection barriersLower limitsMemory elementMetallic electrodesOn/off ratioOperational mechanismOrganic semiconductorRewritable memorySpace-charge limitedStray fieldSwitching mechanismCharge transferLogic circuitsSemiconducting organic compoundsThin filmsFerroelectricity To reference this document use: http://resolver.tudelft.nl/uuid:0af63f32-2c96-45c4-a26d-460efc4591dd DOI https://doi.org/10.1016/j.orgel.2011.10.013 TNO identifier 461347 ISSN 1566-1199 Source Organic Electronics: physics, materials, applications, 13 (1), 147-152 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.